Kniha Electrostatic doping in novel materials Zhiqiang Li

Electrostatic doping in novel materials

A infrared study

Autor: Zhiqiang Li
Jazyk: Angličtina
Väzba: Brožovaná
Dostupnosť: U vydavateľa na objednávku
Odosielame za 17-27 dní
48.55
In this book we present the investigation of§electrostatic doping in a wide variety of novel§materia...

Informácie o knihe

Autor
Jazyk
Angličtina
Väzba
Kniha - Brožovaná
Vydalo
2009
Stránok
112
EAN
9783639147476
Enbook ID
06823317
Hmotnosť
183
Rozmery
150 x 220 x 7

Kompletný popis

In this book we present the investigation of§electrostatic doping in a wide variety of novel§materials incorporated in field-effect transistors§(FETs), including polymers, organic§molecular crystals, graphene and bilayer graphene.§These studies have lead to substantial§advances in our current understanding of these§materials. Specifically, we performed the first§infrared (IR) imaging of the accumulation layer in§poly(3-hexylthiophene) (P3HT)§FETs. Furthermore, we found that charge carriers in§molecular orbital bands with light§mass dominate the transport properties of single§crystal rubrene. More recently, we§explored the IR absorption of graphene and found§several signatures of many-body§interactions. Moreover, we discovered an asymmetric§band structure in bilayer graphene§and determined the band parameters with an accuracy§never achieved before. Our work§has demonstrated that IR spectroscopy is uniquely§suited for probing the electronic§excitations in nanometer-thick accumulation layers in§FET devices.

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