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Technology CAD - Computer Simulation of IC Processes and Devices

Name: Technology CAD - Computer Simulation of IC Processes and Devices
Brand: Springer-Verlag New York Inc.
SKU: 9781461364085
Price: 219.54 EUR
Availability: InStock

Autor: Robert W. Dutton, hiping Yu

Jazyk:

Väzba: Brožovaná

Vydavateľ: Springer-Verlag New York Inc.

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219.54 €

The rapid evolution and explosive growth of integrated circuit technology have impacted society more...

Informácie o knihe

Autor

Robert W. Dutton, hiping Yu

Jazyk

Angličtina

Väzba

Kniha - Brožovaná

Vydalo

2012

Stránok

373

EAN

9781461364085

ISBN

1461364086

Enbook ID

02016379

Vydavateľ

Springer-Verlag New York Inc.

Hmotnosť

605

Rozmery

155 x 235 x 22

Kompletný popis

The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requires more accurate circuit analysis methods and tools, prompting the introduction of computers into the design process. The goal of this book is to build a firm foundation in the use of computer-assisted techniques for IC device and process design. Both practical and analytical viewpoints are stressed to give the reader the background necessary to appreciate CAD tools and to feel comfortable with their use. §Technology CAD - Computer Simulation of IC Processes and Devices presents a unified discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Chapter 1 focuses on the motivation for coupled process and device CAD. In Chapter 2 SUPREM III is introduced, and process CAD is discussed in terms of ion-implantation, impurity diffusion, and oxidation models. Chapter 3 introduces the Stanford device analysis program SEDAN III (SEmiconductor Device ANalysis). The next three chapters move into greater detail concerning device operating principles and analysis techniques. Chapter 4 reviews the classical formulation of pn junction theory and uses device analysis (SEDAN) both to evaluate some of the classical assumptions and to investigate the difficult problem of high level injection. Chapter 5 returns to MOS devices, reviews the first-order MOS theory, and introduces some important second-order effects. Chapter 6 considers the bipolar transistor. Chapter 7 considers the application of process simulation and device analysis to technology design. The BiCMOS process is selected as a useful design vehicle for two reasons. First, it allows the reader to pull together concepts from the entire book. Second, the inherent nature of BiCMOS technology offers real constraints and hence trade-offs which must be understood and accounted for.

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