SiC Power Materials

Name: SiC Power Materials
Brand: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
SKU: 9783540206668
Price: 162.78 EUR
Availability: InStock

Some Applications

Autor: Zhe C. Feng

Jazyk:

Väzba: Pevná

Vydavateľ: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Dostupnosť: Skladom u dodávateľa v malom množstve

Odosielame za 13-18 dní

162.78 €

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior materi...

Informácie o knihe

Autor

Zhe C. Feng

Jazyk

Angličtina

Väzba

Kniha - Pevná

Vydalo

2004

Stránok

452

EAN

9783540206668

ISBN

3540206663

Enbook ID

01558883

Vydavateľ

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Hmotnosť

1850

Rozmery

155 x 235 x 23

Kompletný popis

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D. TOC:Materials Science and Engineering of Bolk Silicon Carbides.- Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibration.- Sublimation Growth of SiC Single Crystals.- Crystal Growth of Silicon Carbide, Evaluation and Modeling.- Lattice Dynamics of Defects and Thermal Properties of 3C-SiC.- Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition.- Electron Paramagnetic Resonance Characterizatoin of SiC.- Material Selection and Interfacial Reaction in Ohmic Contact Formation on SiC.- Oxidation , MOS Capacitors, and MOSFETs.- 4H-SiC Power Switching Devices for Extreme Environment Applications.- SiC Nuclear Radiation Detectors.

Mohlo by vás zaujímať

Zákazníci, ktorí si kúpili túto knihu, kúpili tiež

Najčastejšie vyhľadávané

Categories

Authors

Publishers

Produkty

Produkty

Najčastejšie vyhľadávané

Categories

Authors

Publishers

Produkty

Produkty

SiC Power Materials

Some Applications

Informácie o knihe

Kompletný popis

Mohlo by vás zaujímať

Zákazníci, ktorí si kúpili túto knihu, kúpili tiež