Kniha Radiation Defect Engineering Kozlovski Vitali

Radiation Defect Engineering

Jazyk: Angličtina
Väzba: Pevná
Dostupnosť: 50 % šanca
Prehľadáme celý svet
119.13
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed t...

Informácie o knihe

Jazyk
Angličtina
Väzba
Kniha - Pevná
Vydalo
2005
Stránok
264
EAN
9789812565211
ISBN
9812565213
Enbook ID
05068174
Hmotnosť
706
Rozmery
167 x 254 x 22

Kompletný popis

The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.

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