Progress in Nano-Electro Optics IV

Name: Progress in Nano-Electro Optics IV
Brand: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
SKU: 9783642062261
Price: 149.17 EUR
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Characterization of Nano-Optical Materials and Optical Near-Field Interactions

Autor: Motoichi Ohtsu

Jazyk:

Väzba: Brožovaná

Vydavateľ: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

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This volume focuses on the characterization of nano-optical materials and optical-near field interac...

Informácie o knihe

Autor

Motoichi Ohtsu

Jazyk

Angličtina

Väzba

Kniha - Brožovaná

Vydalo

2010

Stránok

208

EAN

9783642062261

ISBN

3642062261

Enbook ID

01651501

Vydavateľ

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Hmotnosť

349

Rozmery

155 x 235 x 13

Kompletný popis

This volume focuses on the characterization of nano-optical materials and optical-near field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics.This volume focuses on the characterization of nano-optical materials and optical near-field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics.

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Progress in Nano-Electro Optics IV

Characterization of Nano-Optical Materials and Optical Near-Field Interactions

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