Nanoscale Transistors

Name: Nanoscale Transistors
Brand: Springer-Verlag New York Inc.
SKU: 9781441939159
Price: 99.84 EUR
Availability: InStock

Device Physics, Modeling and Simulation

Autor: Mark Lundstrom, Jing Guo

Jazyk:

Väzba: Brožovaná

Vydavateľ: Springer-Verlag New York Inc.

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99.84 €

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace t...

Informácie o knihe

Autor

Mark Lundstrom, Jing Guo

Jazyk

Angličtina

Väzba

Kniha - Brožovaná

Vydalo

2010

Stránok

218

EAN

9781441939159

ISBN

1441939156

Enbook ID

01422460

Vydavateľ

Springer-Verlag New York Inc.

Hmotnosť

358

Rozmery

155 x 235 x 13

Kompletný popis

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single moleculesNANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules.§The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices.

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Nanoscale Transistors

Device Physics, Modeling and Simulation

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