Kniha Hierarchical Device Simulation C. Jungemann

Hierarchical Device Simulation

The Monte-Carlo Perspective

Jazyk: Angličtina
Väzba: Pevná
Vydavateľ: Springer, Wien
Dostupnosť: Skladom u dodávateľa
Odosielame za 10-13 dní
99.78
This monograph is intended for scientists and TCAD engineers who are interested in physics-based sim...

Informácie o knihe

Jazyk
Angličtina
Väzba
Kniha - Pevná
Vydalo
2003
Stránok
261
EAN
9783211013618
ISBN
321101361X
Enbook ID
01463962
Vydavateľ
Hmotnosť
636
Rozmery
156 x 234 x 17

Kompletný popis

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

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