Kniha Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells MUHAMMED SHIBIB

Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells

Jazyk: Angličtina
Väzba: Brožovaná
Dostupnosť: Skladom u dodávateľa
Odosielame za 9-15 dní
58.85
Abstract: This dissertation presents a quantitative study of the physical mechanisms underlying the...

Informácie o knihe

Jazyk
Angličtina
Väzba
Kniha - Brožovaná
Vydalo
2019
Stránok
206
EAN
9780530008127
ISBN
0530008122
Enbook ID
22569085
Hmotnosť
490
Rozmery
216 x 279 x 11

Kompletný popis

Abstract: This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The

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